Substrate processing apparatus and manufacturing method of semiconductor device

ABSTRACT

A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container.

This application is a National Stage of PCT/JP2007/065616 filed Aug. 9,2007, claiming priority from Japanese Application No. 2006-219677 filedAug. 11, 2006. The disclosures of both these applications in theirentirety are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a substrate processing apparatus thatprocesses substrates such as semiconductor wafers and glass substrates,and a semiconductor device manufacturing method including the step ofprocessing a substrate using the substrate processing apparatus.

BACKGROUND ART

In using this type of substrate processing apparatus to form a siliconnitride (Si₃N₄) film or the like by a method such as a CVD (ChemicalVapor Deposition) method, a method is known that heats a low-temperatureportion such as a furnace opening portion to suppress ammonium chloride(NH₄Cl) or other by-products from adhering to the low-temperatureportion (see Patent Document 1). However, even with this method,adhesion of by-products may still occur in portions of the reactionchamber where the processing gas stagnates, generating particles. As acountermeasure, a method is known that suppresses adhesion ofby-products by purging a gas from around the region where the adhesionof by-products occurs and thereby preventing the stagnation of the gas(see Patent Document 2).

-   Patent document 1: JP-A-8-64532-   Patent Document 2: JP-A-10-335317

DISCLOSURE OF THE INVENTION Problems that the Invention is to Solve

However, in the related art, a supply port for supplying a gas isdisposed on a moving part, which necessitates a complicated structure.

An object of the present invention is to provide a substrate processingapparatus that prevents adhesion of by-products with a simple structure,and a manufacturing method of a semiconductor device.

Means for Solving the Problems

According to one aspect of the present invention, there is provided asubstrate processing apparatus including: a reaction container in whicha substrate is processed; a seal cap, brought into contact with one endin an opening side of the reaction container via a first sealing memberand a second sealing member so as to seal the opening of the reactioncontainer air-tightly; a first gas channel, formed in a region betweenthe first sealing member and the second sealing member in a state wherethe seal cap is in contact with the reaction container; a second gaschannel, provided to the seal cap and through which the first gaschannel is in communication with an inside of the reaction container; afirst gas supply port that is provided to the reaction container andsupplies a first gas to the first gas channel; and a second gas supplyport that is provided to the reaction container and supplies a secondgas into the reaction container, wherein a front end opening of thefirst gas supply port opening to the first gas channel, and a baseopening of the second gas channel opening to the first gas channel beingseparated from each other in a state where the seal cap is in contactwith the reaction container.

According to another aspect of the present invention, there is provideda substrate processing apparatus including: a reaction tube in which asubstrate is processed; a manifold having one end connected to anopening of the reaction tube; a seal cap, brought into contact via afirst sealing member and a second sealing member with another end of themanifold on the opposite side of the one end connected to the reactiontube, so as to seal air-tightly an opening in the another end of themanifold; a first gas channel, defined by a recessed portion providedalong the first sealing member and the second sealing member and in atleast a portion of at least one of the manifold and the seal cap in aregion between the first sealing member and the second sealing member,in a state where the seal cap is in contact with the manifold; a secondgas channel, provided to the seal cap and through which the first gaschannel is in communication with an inside of the reaction tube; a firstgas supply port that is provided to the manifold and supplies a firstgas to the first gas channel; and a second gas supply port that isprovided to the manifold and supplies a second gas into the reactiontube, wherein a portion of the first gas supply port opening to thefirst gas channel, and a portion of the second gas channel opening tothe first gas channel being positioned so as not to overlap each otherin a state where the seal cap is in contact with the manifold.

According to yet another aspect of the present invention, there isprovided a substrate processing apparatus including: a reactioncontainer in which a substrate is processed; a seal cap, brought intocontact with one end in a opening side of the reaction container via afirst sealing member and a second sealing member, so as to seal theopening of the reaction container air-tightly; a first gas channel,defined by an annular recessed portion provided in at least one ofreaction container and the seal cap in a region between the firstsealing member and the second sealing member in a state where the sealcap is in contact with the reaction container;

a second gas channel, provided to the seal cap and through which thefirst gas channel is in communication with an inside of the reactioncontainer; a first gas supply port that is provided to the reactioncontainer and supplies a first gas to the first gas channel; and asecond gas supply port that is provided to the reaction container andsupplies a second gas into the reaction container, wherein a portion ofthe first gas supply port opening to the first gas channel, and aportion of the second gas channel opening to the first gas channel beingseparated from each other in a state where the seal cap is in contactwith the reaction container.

According to still another aspect of the present invention, there isprovided a substrate processing apparatus including: a reactioncontainer in which a substrate is processed; a seal cap, brought intocontact with one end in an opening side of the reaction container via afirst sealing member and a second sealing member, so as to seal theopening of the reaction container air-tightly; a first gas channel,formed in a region between the first sealing member and the secondsealing member in a state where the seal cap is in contact with thereaction container; a second gas channel, provided to the seal cap andthrough which the first gas channel is in communication with an insideof the reaction container; and a gas supply port that is provided to thereaction container and supplies a gas to the first gas channel, whereina portion of the first gas supply port opening to the first gas channel,and a portion of the second gas channel opening to the first gas channelbeing separated from each other is a state where the seal cap is incontact with the reaction container.

According to yet another aspect of the present invention, there isprovided a method of manufacturing a semiconductor device, comprisingthe steps of: loading a substrate into a reaction container; forming afirst gas channel in a region between a first sealing member and asecond sealing member, by bringing a seal cap into contact with one endin an opening side of the reaction container via the first sealingmember and the second sealing member so as to seal the opening of thereaction container air-tightly; processing the substrate by supplying afirst gas to the first gas channel through a first gas supply portprovided to the reaction container, and supplying the first gas suppliedto the first gas channel into the reaction container through a secondgas channel that is provided to the seal cap to connect the first gaschannel to the reaction container, and supplying a second gas into thereaction container through a second gas supply port provided to thereaction container; and unloading the processed substrate from thereaction container.

According to still another aspect of the present invention, there isprovided a method of manufacturing a semiconductor device, comprisingthe steps of: loading a substrate into a reaction container; forming afirst gas channel in a region between a first sealing member and asecond sealing member, by bringing a seal cap into contact with one endin an opening side of the reaction container via the first sealingmember and the second sealing member so as to seal the opening of thereaction container air-tight; processing the substrate by supplying agas to the first gas channel through a first gas supply port provided tothe reaction container, and supplying the gas supplied to the first gaschannel into the reaction container through a second gas channel that isprovided to the seal cap to connect the first gas channel to thereaction container; and unloading the processed substrate from thereaction container.

ADVANTAGE OF THE INVENTION

According to the present invention, a first gas channel is formed in atleast a portion of a region surrounded by a reaction chamber, a sealcap, a first sealing member, and a second sealing member. This enables asupply port to be provided in a non-moving part, thereby preventingadhesion of by-products with a simple structure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a longitudinal sectional view showing a processing furnace ofa substrate processing apparatus according to an embodiment of thepresent invention.

FIG. 2 is a longitudinal sectional view showing the vicinity of a lowerend portion of the processing furnace of the substrate processingapparatus according to an embodiment of the present invention.

FIG. 3 is a perspective view showing the vicinity of a lower end portionof the processing furnace of the substrate processing apparatusaccording to an embodiment of the present invention.

FIG. 4 is a longitudinal sectional view showing the vicinity of a lowerend portion of the processing furnace of the substrate processingapparatus according to an embodiment of the present invention, in which(a) shows a state in which a manifold and a seal cap are separated fromeach other, and (b) shows a state in which the manifold and the seal capare in contact with each other.

FIG. 5 is a cross sectional view showing the vicinity of a portion inwhich a groove is formed in the substrate processing apparatus accordingto an embodiment of the present invention, in which (a) shows an examplein which the groove is formed on an upper surface of the seal cap, (b)shows an examples in which the groove is formed on a lower surface ofthe manifold, and (c) shows an example in which the groove is formed onthe upper surface of the seal cap and the lower surface of the manifold.

FIG. 6 is a schematic diagram, in which (a) shows a positionalrelationship between a front end opening of a supply port and a baseopening of a gas supply pipe when the groove is formed as a circular arcin the substrate processing apparatus according to an embodiment of thepresent invention, and (b) shows a positional relationship between thefront end opening of the supply port and the base opening of the gassupply pipe when the groove is formed as a circular ring.

FIG. 7 is an explanatory diagram, in which (a) shows a gas flow througha gas channel in the substrate processing apparatus according to anembodiment of the present invention, and (b) shows a gas flow through agas channel in a substrate processing apparatus according to acomparative example of the present invention.

DESCRIPTION OF REFERENCE NUMERALS AND SIGNS

-   100 Substrate processing apparatus-   200 Wafer-   209 Manifold-   210 Reaction container-   219 Seal cap-   221 a First O-ring-   221 b Second O-ring-   230 a First supply port-   230 b Second supply port-   255 Rotation shaft-   270 Groove-   272 First gas channel-   288 a First vertical portion-   288 b Second vertical portion-   290 Second gas channel-   292 Outlet

BEST MODE FOR CARRYING OUT THE INVENTION

The following will describe an embodiment of the present invention withreference to the accompanying drawings.

FIG. 1 is a schematic longitudinal sectional view illustrating theconstruction of a processing furnace 202 of a substrate processingapparatus 100 suitably used in one embodiment of the present invention.

As shown in FIG. 1, the processing furnace 202 includes a heater 206provided as a heating mechanism (heating means). The heater 206 iscylindrical in shape, and vertically supported by a heater base 251provided as a holding plate.

Inside the heater 206 is disposed a process tube 203, concentric to theheater 206. The process tube 203 is provided as a reaction tube wheresubstrates are processed. The process tube 203 includes an inner tube204 provided as an inner reaction tube, and an outer tube 205 providedas an outer reaction tube around the inner tube 204. The inner tube 204is made of a heat-resistant material such as quartz (SiO₂) or siliconcarbide (SiC), and is cylindrical in shape with an open upper end and anopen lower end. Inside the cylindrical hollow space of the inner tube204 is a processing chamber 201 where substrates are processed. Theprocessing chamber 201 is configured to store wafers 200 (substrates)using a boat 217 (described later), by which the wafers 200 arehorizontally held and vertically aligned over one another in multiplestages. The outer tube 205 is made of a heat-resistant material such asquartz or silicon carbide. The outer tube 205, cylindrical in shape andconcentric to the inner tube 204, has an inner diameter larger than theouter diameter of the inner tube 204. The upper end of the outer tube205 is closed and the lower end is open.

Below the outer tube 205 is disposed a manifold 209, concentric to theouter tube 205. The manifold 209 is made of, for example, stainlesssteel or the like, and is cylindrical in shape with an open upper endand an open lower end. The manifold 209 is coupled to the process tube203 (inner tube 204 and outer tube 205) to support these members.Between the manifold 209 and the outer tube 205, an O-ring 220 isprovided as a sealing member. The heater base 251 supports the manifold209 to vertically support the process tube 203. The process tube 203 andthe manifold 209 constitute a reaction container 210.

The manifold 209 is coupled to a plurality of supply ports 230 (firstsupply port 230 a and second supply port 230 b, described later withreference to FIG. 2), so that the supply ports 230 are in communicationwith the processing chamber 201. The supply ports 230 are connected togas supply lines 232. A process-gas supply source and an inert gassupply source (described later) are respectively connected to the gassupply lines 232 on the upstream side, i.e., on the opposite side of theend connected to the supply ports 230, via an MFC (mass flow controller)241 provided as a gas flow rate controller. The MFC 241 includes, asdescribed later, a first MFC 241 a, a second MFC 241 b, and a third MFC241 c (see FIG. 2). The MFC 241 is electrically connected to a gas flowrate controller 235, which controls the flow rate of supplied gas at adesirable timing to provide a desired flow rate.

The manifold 209 includes an exhaust pipe 231 through which theatmosphere inside the processing chamber 201 is discharged. The exhaustpipe 231 is disposed at a lower end portion of a tubular space 250defined by the clearance gap between the inner tube 204 and the outertube 205, and is in communication with the tubular space 250. Anevacuator 246, such as a vacuum pump, is coupled to the exhaust pipe 231on the downstream side, i.e., on the opposite side of the end connectedto the manifold 209, via a pressure sensor 245 as a pressure detectorand a pressure adjuster 242. With this configuration, the evacuator 246can evacuate to create a predetermined pressure (vacuum) in theprocessing chamber 201. The pressure adjuster 242 and the pressuresensor 245 are electrically connected to a pressure controller 236,which controls the pressure adjuster 242 at a desirable timing based onthe pressure detected by the pressure sensor 245, so as to provide adesired pressure in the processing chamber 201.

Below the manifold 209 is provided a seal cap 219, which is a furnacecap capable of sealing the lower end opening of the manifold 209air-tightly. The seal cap 219 can be brought into contact with the lowerend of the manifold 209 from below. The seal cap 219 is a disc-likemember made of a metal such as stainless steel. On an upper surface ofthe seal cap 219 is provided a plurality of O-rings 221, provided as asealing member, which are brought into contact with the lower end of themanifold 209. Via the O-rings 221 (first O-ring 221 a and second O-ring221 b, described later), the seal cap 219 is brought into contact withthe lower end of the manifold 209 on the opposite side of the endconnected to the outer tube 205, so as to seal the open lower end of themanifold 209 air-tightly. On the opposite side of the seal cap 219 withrespect to the processing chamber 201 is disposed, a rotation mechanism(rotation means) 254 that rotates the boat. The rotation mechanism 254has a rotation shaft 255 that penetrates through the seal cap 219 and iscoupled to the boat 217 later described. The rotation mechanism 254rotates the boat 217 to spin the wafers 200. A boat elevator 115,provided as an elevation mechanism (elevation means), verticallyprovided outside the process tube 203 realizes a vertical ascending anddescending movement of the seal cap 219, enabling the boat 217 to becarried in and out of the processing chamber 201. The rotation mechanism254 and the boat elevator 115 are electrically connected to a drivecontroller 237, which controls these members at a desirable timing torealize desired operations.

The boat 217, provided as a substrate holder, is made of aheat-resistant material such as quartz or silicon carbide. The boat 217horizontally holds each wafer 200 as a substrate and vertically alignsthe wafers 200 over one another in multiple stages, with the centers ofthe wafers 200 lined up. In a lower portion of the boat 217,heat-insulating plates 216 are provided as disc-like heat-insulatingmembers. The heat-insulating plates 216 are made of a heat-resistantmaterial such as quartz or silicon carbide, and are horizontallydisposed over one another in multiple stages so as to suppress thetransfer of heat from the heater 206 to the manifold 209.

Inside the process tube 203 is disposed a temperature sensor 263provided as a temperature detector. The heater 206 and the temperaturesensor 263 are electrically connected to a temperature controller 238.The temperature controller 238 controls the temperature in theprocessing chamber 201 at a desirable timing so that a desiredtemperature distribution is obtained in the processing chamber 201. Thiscontrol is performed by adjusting supplied electricity to the heater 206based on temperature information detected by the temperature sensor 263.

The gas flow rate controller 235, the pressure controller 236, the drivecontroller 237, and the temperature controller 238 constitute anoperation unit and an input/output unit, and are electrically connectedto a main controller 239, which controls the entire operation of thesubstrate processing apparatus. The gas flow rate controller 235, thepressure controller 236, the drive controller 237, the temperaturecontroller 238, and the main controller 239 constitute a controller 240.

In the following, a peripheral structure of the manifold 209 and therotation mechanism 254 will be described with reference to FIG. 2through FIG. 7.

As shown in FIG. 2 and FIG. 3, the O-rings 221 include the first O-ring221 a, provided as a first sealing member, and the second O-ring 221 b,provided as a second sealing member. That is, via the first O-ring 221 aand the second O-ring 221 b, the seal cap 219 is in contact with theopening at one end of the reaction container 210 (manifold 209), so asto seal the opening of the reaction container 210 air-tightly.

A groove 270 is formed in at least a portion of at least one of thereaction container 210 (manifold 209) and the seal cap 219 in a regionsurrounded by the reaction container 210 (manifold 209), the seal cap219, the first O-ring 221 a, and the second O-ring 221 b, when the sealcap 219 is in contact with the reaction container 210 (manifold 209).The groove 270 is one of the constituting elements of a first gaschannel 272, and formed concentric to the first O-ring 221 a and thesecond O-ring 221 b. More specifically, as shown in FIG. 3 for example,the groove 270 is provided in the shape of a ring (circular ring) in aregion between the first O-ring 221 a and the second O-ring 221 b formedon the upper surface of the seal cap 219, along the periphery of theseal cap 219.

The groove 270 may be in the shape of a circular arc, instead of acircular ring. For example, the groove 270 may be formed in the shape ofa circular arc in at least a portion of the region between the firstO-ring 221 a and the second O-ring 221 b formed on the upper surface ofthe seal cap 219, with a center angle of, for example, 180°, along theperiphery of the seal cap 219. Further, the groove 270 may be a circulararc with a center angle of no more than 180°, for example, 90°. Further,the groove 270 may be a circular arc with a center angle of 180° orgreater, for example, 270°.

As shown in FIG. 4, the first gas channel 272 is formed in a portionwhere the groove 270 is provided as a result of the seal cap 219 beingdriven and lifted by the boat elevator 115 (in the direction of arrow ain FIG. 4( a)) and making contact with the lower end of the reactioncontainer 210 (manifold 209) via the first O-ring 221 a and the secondO-ring 221 b (see FIG. 4( b)).

In this manner, the first gas channel 272 is formed in a spacesurrounded by the manifold 209, the seal cap 219, and the double O-ring(first O-ring 221 a and second O-ring 221 b), along the periphery of theseal cap 219, so as to be separable (detachable) by the ascending anddescending movement of the boat elevator 115. In this way, the gaschannel can be formed in a simple structure in a moving part such as theseal cap 219.

In the present embodiment, the groove 270 is formed on the upper surfaceof the seal cap 219, as shown in the enlarged view of FIG. 5( a).However, the groove 270 may be formed on the side of the manifold 209(reaction container 210), i.e., on the lower surface of the manifold 209(reaction container 210) as shown in the enlarged view of FIG. 5( b), oron both of the seal cap 219 and the manifold 209, i.e., on the uppersurface of the seal cap 219 and the lower surface of the manifold 209 asshown in the enlarged view of FIG. 5( c).

The supply ports 230 include the first supply port 230 a and the secondsupply port 230 b. As shown in FIG. 2, the first supply port 230 a isprovided to the reaction container 210 (manifold 209) to supply a gas tothe first gas channel 272. More specifically, the first supply port 230a is connected to a first gas supply line 232 a, which is provided witha first gas supply source 274 a, a first valve 276 a, a first MFC 241 a,and a second valve 276 b, in this order from the upstream side. Thefirst gas supply source 274 a stores therein an additive gas such asammonia (NH₃) gas or nitrogen (N₂) gas, which is supplied to the firstsupply port 230 a via the first valve 276 a, the first MFC 241 a, andthe second valve 276 b provided to the first gas supply line 232 a.

The first gas supply source 274 a may store an inert gas such as argon(Ar) gas or helium (He) gas.

The second supply port 230 b is provided to the reaction container 210(manifold 209) to supply a gas to the reaction container 210. Morespecifically, the second supply port 230 b is connected to a second gassupply line 232 b, which is provided with a second gas supply source 274b, a third valve 276 c, a second MFC 241 b, and a fourth valve 276 d, inthis order from the upstream side. The second gas supply source 274 bstores therein a chlorosilane gas such as DCS (dichlorosilane; SiH₂Cl₂),TCS (trichlorosilane; SiHCl₃), or HCD (hexachlorodisilane; Si₂Cl₆). Thechlorosilane gas is supplied to the second supply port 230 b via thethird valve 276 c, the second MFC 241 b, and the fourth valve 276 dprovided to the second gas supply line 232 b.

A third gas supply line 232 c is connected to the second gas supply line232 b between the second supply port 230 b and the fourth valve 276 d.The third gas supply line 232 c is provided with a third-gas supplysource 274 c, a fifth valve 276 e, a third MFC 241 c, and a sixth valve276 f, in this order from the upstream side. The third-gas supply source274 c stores therein a cleaning gas such as a fluorine (F₂) gas, anitrogen trifluoride (NF₃) gas, and a chlorine trifluoride (ClF₃) gas.The cleaning gas is supplied to the second supply port 230 b via thefifth valve 276 e, the third MFC 241 c, the sixth valve 276 f, and thesecond gas supply line 232 b provided to the third gas supply line 232c.

Because the second supply port 230 b is connected to both the second gassupply line 232 b supplying a chlorosilane gas and the third gas supplyline 232 c supplying a cleaning gas, a backflow of by-products into thesecond gas supply port 230 b or stagnation of by-products therein can beprevented compared with the case where the chlorosilane-gas supply lineand the cleaning-gas supply line are connected to their respectivesupply ports. This prevents the adhesion of by-products to the innerwall surface of the second gas supply port 230 b. Further, cost can bereduced by sharing the supply port.

The rotation mechanism 254 includes a rotation mechanism main body 278.The rotation mechanism main body 278 includes the rotation shaft 255, abearing unit 280, a cooling unit 282, and a driving unit 284. Inside therotation mechanism main body 278, a predetermined space is providedbetween the inner wall of the rotation mechanism main body 278 and therotation shaft 255 to form a hollow portion 286 having an open upperend. The bearing unit 280 includes a magnetic bearing 280 a and two ballbearings 280 b disposed below the magnetic bearing 280 a, and rotatablysupports the rotation shaft 255 about the rotation mechanism main body278.

The cooling unit 282 includes a coolant channel 282 b provided aroundthe magnetic bearing 280 a, and a coolant pipe 282 a connected to thecoolant channel 282 b. The cooling unit 282 is provided to cool therotation mechanism main body 278 by supplying and discharging a coolantthrough the coolant pipe 282 a and circulating the coolant through thecoolant channel 282 b. The driving unit 284 includes a driving gear 284a coupled to a drive source (not shown), and an input gear 284 b formedon the rotation shaft 255 and in mesh with the driving gear 284 a. Thedriving unit 284 is provided to transmit the driving force of the drivesource to the rotation shaft 255 and rotate the rotation shaft 255 at apredetermined number of revolutions.

A gas supply pipe 288, one of the constituting elements of a second gaschannel 290, has one end connected to the seal cap 219 and the other endconnected to the rotation mechanism 254. More specifically, the gassupply pipe 288 is in communication with the first gas channel 272 onthe upstream side, and the hollow portion 286 of the rotation mechanismmain body 278 on the downstream side. The second gas channel 290, incommunication with the first gas channel 272, is realized by the gassupply pipe 288 and the hollow portion 286 of the rotation mechanismmain body 278. The seal cap 219 includes a through hole 219 a throughwhich the rotation shaft 255 is provided. The space between the throughhole 219 a and the rotation shaft 255 defines an outlet 292, throughwhich the second gas channel 290 is in communication with the reactioncontainer 210.

As shown in FIG. 2 and FIG. 3, the gas supply pipe 288 includes a firstvertical portion 288 a and a second vertical portion 288 b, with whichthe gas supply pipe 288 is separable. Specifically, the first verticalportion 288 a and the second vertical portion 288 b of the gas supplypipe 288 are each provided with a joint 296, and a third pipe 306(U-shaped member, for example), defining a portion of the first verticalportion 288 a and a portion of the second vertical portion 288 b, isdetachably provided via the joints 296 to a first pipe 302 defining aportion of the first vertical portion 288 a and a second pipe 304defining a portion of the second vertical portion 288 b. Here, becausethe joint 296 connecting the first pipe 302 and the third pipe 306, andthe joint 296 connecting the second pipe 304 and the third pipe 306 areboth vertically oriented to the pipes, the third pipe 306 can bedetached and attached with ease. More specifically, when the by-productsof reaction have adhered to the gas supply pipe 288 and necessitatedservice, replacement or the like of the third pipe 306 can easily beperformed by detaching and attaching it. That is, ease of maintenancecan be improved.

It is preferable to heat the gas supply pipe 288 by heating means (notshown), because it suppresses or prevents adhering of the reactionby-products or the like to the gas supply pipe 288.

When the groove 270 is formed as a circular arc instead of a circularring as described above, it is preferable to connect the supply port 230a to one end of the groove 270 forming an arc channel, and the gassupply pipe 288 to the other end of the groove 270, as shown in FIG. 6(a). This arrangement facilitates formation of an active gas flowthroughout the arc channel formed by the groove 270, without forming a“pouch”. In contrast, when the supply port 230 a and the gas supply pipe288 are connected to portions of the circular arc channel other thanthese ends, a pouch is created and no active gas flow occurs. The NH₃diffused and stagnated in the pouch will not be purged sufficiently andaccumulates therein. As used herein, the “pouch” refers to a dead-endportion of the groove, pipe, and the like with a closed end.

As described, the groove 270 forming a channel for NH₃ should be formedalong the double O-ring (first O-ring 221 a and second O-ring 221 b) inat least a portion of at least one of the manifold 209 and the seal cap219 in a region between the first O-ring 221 a and the second O-ring 221b, when the seal cap is in contact with the manifold 209 via the doubleO-ring. It is more preferable to form the groove 270 as a circular ringalong the entire periphery as in the embodiment described with referenceto FIG. 6( b), instead of providing it as a circular arc in at least aportion of the region between the first O-ring 221 a and the secondO-ring 221 b. This is because forming the groove 270 as a circular ringfacilitates the formation of an active gas flow throughout the entireregion between the first O-ring 221 a and the second O-ring 221 b andthereby suppresses accumulation of gas. Further, in terms ofprocessibility, it is easier to form the groove 270 along the entireperiphery.

Note that, the center angle θ of the arc channel formed between thepoint at the front end opening of the NH₃ supply port 230 a and thepoint at the base opening of the gas supply pipe 288 should preferablyfall in a range of 90° to 270°, regardless of whether the groove 270 isformed as a circular arc as shown in FIG. 6( a), or a circular ring asshown in FIG. 6( b). When the center angle θ is too small, for example,5° C., there will be partial stagnation of gas and no active gas flowoccurs throughout the entire channel, which may lead to the formation ofa pouch. Preferably, the center angle θ is about 180°. In other words,it is preferable that the point at the front end opening of the NH₃supply port 230 a and the point at the base opening of the gas supplypipe 288 be substantially opposite to each other with the rotation shafttherebetween.

As described above, the first supply port 230 a, the first gas channel272, the second gas channel 290, and the outlet 292 define a gas paththrough which the additive gas is supplied. Thus, the additive gassupplied to the first gas supply line 232 a is supplied into thereaction container 210 through the central portion of the manifold 209,via the first supply port 230 a, the first gas channel 272, the secondgas channel 290, and the outlet 292. On the other hand, thechlorosilicon compound gas supplied to the second gas supply line 232 bis supplied into the reaction container 210 through a side wall portionof the manifold 209 via the second supply port 230 b. In this manner,the additive gas and the chlorosilane gas are supplied into the reactioncontainer 210 through different supply ports.

The following will describe a method of forming a thin film on thewafers 200 using a CVD method, as one of manufacturing steps of asemiconductor device using the processing furnace 202 having theforegoing configuration. In the following description, the operation ofeach member constituting the substrate processing apparatus iscontrolled by the controller 240.

Upon charging of the wafers 200 into the boat 217 (wafer charge), theboat 217 holding the wafers 200 is lifted up by the boat elevator 115and loaded into the processing chamber 201 (boat loading; substrateloading step), as shown in FIG. 4. In this state, the seal cap 219 sealsthe lower end of the manifold 209 via the first O-ring 221 a and thesecond O-ring 221 b. That is, the seal cap 219 is in contact with theopening at one end of the reaction container 210 via the first O-ring221 a and the second O-ring 221 b to seal the opening of the reactioncontainer 210 air-tightly and form the first gas channel 272 in at leasta portion of the region surrounded by the reaction container 210, theseal cap 219, the first O-ring 221 a, and the second O-ring 221 b.

The evacuator 246 evacuates inside the processing chamber 201 to createa desired pressure (vacuum). Here, the pressure inside the processingchamber 201 is measured by the pressure sensor 245, and the pressureadjuster 242 is under feedback control based on the measured pressure.The heater 206 provides heat to obtain a desired temperature in theprocessing chamber 201. Here, the heater 206 is under feedback controlbased on temperature information detected by the temperature sensor 263,so that sufficient electricity is supplied to the heater 206 to providea desired temperature distribution in the processing chamber 201.Following this, the rotation mechanism 254 rotates the boat 217 to spinthe wafers 200.

Thereafter, an additive gas is supplied to the first gas channel 272through the first supply port 230 a provided to the reaction container210. The additive gas supplied to the first gas channel 272 is thenflown into the second gas channel 290 in communication with the firstgas channel 272. The additive gas flown into the second gas channel 290is supplied into the reaction container 210 through the outlet 292,through which the second gas channel 290 is in communication with thereaction container 210. While the additive gas is supplied, chlorosilanegas is supplied into the reaction container 210 through the secondsupply port 230 b provided to the reaction container 210. The gasintroduced into the reaction container 210 drifts upward inside theprocessing chamber 201 and is flown into the tubular space 250 throughthe upper end opening of the inner tube 204 to be discharged through theexhaust pipe 231. In its passage through the processing chamber 201, thegas makes contact with the surfaces of the wafers 200, and a thin filmis deposited thereon by a thermal CVD reaction (substrate processingstep).

Here, because the additive gas is supplied into the reaction container210 by being flown around the rotation shaft 255 and through the outlet292 formed in the clearance space between the rotation shaft 255 and theseal cap 219, at least a portion of the rotation shaft 255 below theseal cap 219 does not make contact with the corrosive chlorosilane gas,making it possible to prevent corrosion at least in this portion of therotation shaft 255. Further, because the corrosive chlorosilane gas doesnot enter the rotation mechanism 254, no corrosion occurs in this partof the apparatus.

After a preset period of process time, the supply of the chlorosilanegas is stopped to end deposition, while the additive gas is still beingsupplied. This is followed by cutting the supply of the additive gas andsupplying of inert gas from the inert gas supply source. This flushesinside the reaction container 210 with the inert gas, and the pressureinside the reaction container 210 returns to ordinary pressure.

Thereafter, the seal cap 219 is lowered by the boat elevator 115 and thelower end of the manifold 209 is opened. With the processed wafers 200held in the boat 217, the boat 217 is discharged out of the reactioncontainer 210 through the lower end of the manifold 209 (substratedischarge step). The processed wafers 200 are then unloaded from theboat 217 (wafer unloading).

As described above, in the substrate processing apparatus 100 of thepresent invention, the additive gas is not directly supplied into therotation mechanism 254 from the gas supply source, but indirectly intothe rotation mechanism 254 through the space (first gas channel 272)surrounded by the manifold 209, the seal cap 219, and the double O-ring(first O-ring 221 a and second O-ring 221 b) and formed along theperiphery of the seal cap 219. In this way, the first supply port 230 aused to supply the additive gas can be formed on the manifold 209, whichis a non-moving part. This simplifies the structure by eliminating theneed to provide a pipe for additive gas on a movable cable (not shown)or the like of the boat elevator 115.

The manifold 209 is heated to some extent by heat such as the radiantheat from the heater 206, or the heat transferred from the process tube203. Thus, the additive gas can be heated preliminary by flowing throughthe first gas channel 272. The preliminarily heated additive gas issupplied into the reaction container 210 through the second gas channel290 and the outlet 292. This suppresses temperature drop in portions ofthe furnace near the outlet 292, and promotes thermal decomposition ofthe additive gas. The preliminary heating effect of the additive gas canbe enhanced by increasing the length of the first gas channel 272, i.e.,by providing a larger center angle for the circular arc formed by thegroove 270.

The mount position of the gas supply pipe 288 can be freely adjusted andthe gas supply pipe 288 can be freely positioned by adjusting the regionwhere the first gas channel 272 is provided, i.e., by adjusting thecenter angle of the circular arc formed by the groove 270. This enablesthe gas supply pipe 288 to be disposed at an optimum position withoutchanging the layout of the other members.

Further, in the substrate processing apparatus 100 of the presentinvention, the supply port 230 a provided on the manifold 209 and thegas supply pipe 288 provided on the seal cap 219 do not need to bedirectly connected to each other when the seal cap 219 is brought intocontact with the manifold 209. Accordingly, no precise registration isneeded for the front end opening of the supply port 230 a and the baseopening of the gas supply pipe 288. In the substrate processingapparatus 100 of the present invention, the front end opening of the NH₃supply port 230 a is only required to be positioned in a region betweenthe first O-ring 221 a and the second O-ring 221 b where the NH₃ channelis formed, when the seal cap 219 is brought into contact with themanifold 209. In other words, the only requirement for the front endopening of the NH₃ supply port 230 a is to meet the region between thefirst O-ring 221 a and the second O-ring 221 b. Because the regionbetween the first O-ring 221 a and the second O-ring 221 b has a largerarea than the front end opening of the NH₃ supply port 230 a, positionregistration between the two can easily be performed.

On the other hand, when the substrate processing apparatus 100 isconfigured such that the supply port 230 a and the gas supply pipe 288are directly connected to each other when the seal cap 219 is broughtinto contact with the manifold 209, it would require precise positionregistration for the front end opening of the supply port 230 a and thebase opening of the gas supply pipe 288. Because the front end openingof the supply port 230 a and the base opening of the gas supply pipe 288have substantially the same area, it is very difficult to correctly matethese members (position registration is very difficult).

Further, in the substrate processing apparatus 100 of the presentinvention, the gas channel is formed by providing the groove 270 in theregion between the first O-ring 221 a and second O-ring 221 b, along thefirst O-ring 221 a and the second O-ring 221 b. The channel formed inthis region can create an active gas flow, as shown by the arrows inFIG. 7( a), and prevent the formation of a pouch. There accordingly willbe no stagnation of NH₃ in the region between the first O-ring 221 a andthe second O-ring 221 b. Further, by purging the channel formed by thegroove 270 with an inert gas after the deposition process, the NH₃ inthe channel can be purged quickly and sufficiently, eliminating residualNH₃ in the channel.

On the other hand, when the substrate processing apparatus 100 isconfigured such that the supply port 230 a and the gas supply pipe 288are directly connected to each other when the seal cap 219 is broughtinto contact with the manifold 209, there is a possibility that the NH₃would diffuse from the junction between the supply port 230 a and thegas supply pipe 288 and stagnate in the region between the first O-ring221 a and the second O-ring 221 b interposed between the manifold 209and the seal cap 219, as shown by the arrows in FIG. 7( b). In otherwords, a pouch is formed by a small space formed in the region betweenthe first O-ring 221 a and the second O-ring 221 b interposed betweenthe manifold 209 and the seal cap 219, and there will not be sufficientactive gas flow in this portion of the region. The NH₃ diffused andstagnated at the pouch will not be purged sufficiently and remainstherein. This may lead to a safety problem that the residual NH₃diffuses out of the furnace during unloading of the boat afterdeposition.

In the substrate processing apparatus 100 of the present invention, thecontact portion between the seal cap 219 and the manifold 209 is raisedto a temperature of about 100° C. to 200° C. during deposition. Thus, byflowing NH₃ through the channel formed by the groove 270 in the regionbetween the first O-ring 221 a and the second O-ring 221 b, the NH₃ canbe preliminarily heated by the heat of the seal cap 219 and the manifold209, as described above.

The following will describe examples.

EXAMPLE 1

The substrate processing apparatus 100 of the present invention was usedto perform a deposition process forming a Si₃N₄ film on a wafer using athermal CVD method. DCS and NH₃ were used as chlorosilane gas andadditive gas, respectively. The process temperature was 550° C. to 900°C., and the pressure in the processing chamber was 1 to 100 Pa. Thedeposition process was performed at a DCS/NH₃ flow rate ratio of 1:3.The results were desirable, with an intrawafer film thickness uniformityof ±0.7%, and an interwafer film thickness uniformity of ±1.8%. Afterthe deposition process, the rotation mechanism 254 was detached from theseal cap 219 to check inside of the rotation mechanism 254. There was noadhesion of the by-product NH₄Cl in portions of the rotation shaft 255below the seal cap 219 nor inside the rotation mechanism 254.

EXAMPLE 2

The substrate processing apparatus 100 of the present invention was usedto perform a deposition process forming a Si₃N₄ film on a wafer using athermal CVD method. DCS and NH₃ were used as chlorosilane gas andadditive gas, respectively. The process temperature was 550° C. to 900°C., and the pressure in the processing chamber was 1 to 100 Pa. Thedeposition process was performed at a DCS/NH₃ flow rate ratio of 1:1.5.The results were desirable, similar to Example 1 both in intrawafer filmthickness uniformity and interwafer film thickness uniformity. After thedeposition process, the rotation mechanism 254 was detached from theseal cap 219 to check inside of the rotation mechanism 254. There was noadhesion of the by-product NH₄Cl in portions of the rotation shaft 255below the seal cap 219 nor inside the rotation mechanism 254.

As shown by these results, with the substrate processing apparatus 100of the present invention, adhesion of by-products to the surrounding ofthe rotation shaft 255 can be prevented while ensuring intrawafer filmthickness uniformity and interwafer film thickness uniformity.

The deposition process may be performed while purging an inert gas suchas a nitrogen (N₂) gas, an argon (Ar) gas, or a helium (He) gas fromregions around the rotation shaft 255.

The inert gas may also be flown through regions around the rotationshaft 255 to purge the rotation shaft 255 during a cleaning processremoving the film adhered inside the reaction container 210. In thiscase, a blank boat 217 is loaded into the reaction container 210, and aninert gas, such as N₂, is supplied to the first gas channel 272 throughthe first supply port 230 a after forming the first gas channel 272. Theinert gas supplied to the first gas channel 272 is then flown throughthe second gas channel 290, and the inert gas flowing through the secondgas channel 290 is supplied into the reaction container 210 through theoutlet 292. Thereafter, while supplying the inert gas, a cleaning gas issupplied into the reaction container 210 through the second supply port230 b. The cleaning gas is supplied from the third-gas supply source 274c via the third gas supply line 232 c and the second gas supply line 232b. The effects described in the foregoing embodiment can also beobtained in this way.

While the foregoing Examples 1 and 2 described the case where the Si₃N₄film is deposited, the invention is applicable not only to thedeposition of the Si₃N₄ film but generally to a whole range ofdeposition processes using two or more kinds of gases such as SiON, HTO(High Temperature Oxide (SiO₂)), SiC, and SiCN. For example, whendepositing a SiON film using SiH₂Cl₂, N₂O, and NH₃, NH₃ or N₂O issupplied from the side of the rotation shaft. When depositing an HTOfilm using SiH₂Cl₂, or SiH₄ and N₂O for example, N₂O is supplied fromthe side of the rotation shaft. When depositing a SiC film using SiH₂Cl₂and C₃H₆ for example, C₃H₆ is supplied from the side of the rotationshaft. When depositing a SiCN film using SiH₂Cl₂, C₃H₆, and NH₃ forexample, C₃H₆ or NH₃ is supplied from the side of the rotation shaft.

The following describes preferred modes of the present invention.

According to one aspect of the present invention, there is provided asubstrate processing apparatus including: a reaction container in whicha substrate is processed; a seal cap, brought into contact with one endin an opening side of the reaction container via a first sealing memberand a second sealing member so as to seal the opening of the reactioncontainer air-tightly; a first gas channel, formed in a region betweenthe first sealing member and the second sealing member in a state wherethe seal cap is in contact with the reaction container; a second gaschannel, provided to the seal cap and through which the first gaschannel is in communication with an inside of the reaction container; afirst gas supply port that is provided to the reaction container andsupplies a first gas to the first gas channel; and a second gas supplyport that is provided to the reaction container and supplies a secondgas into the reaction container, wherein a front end opening of thefirst gas supply port opening to the first gas channel, and a baseopening of the second gas channel opening to the first gas channel beingseparated from each other in a state where the seal cap is in contactwith the reaction container.

Preferably, a groove provided along the first sealing member and thesecond sealing member, in at least a portion of at least one of thereaction container and the seal cap in the region between the firstsealing member and the second sealing member, in a state where the sealcap is in contact with the reaction container, wherein the first gaschannel is defined by the groove

Preferably, the groove is a form of an arc or a ring.

Preferably, the groove is provided along an entire periphery of theregion between the first sealing member and the second sealing member.

Preferably, the front end opening of the first gas supply port and thebase opening of the second gas channel are positioned substantiallyopposite to each other with respect to the center of the seal cap, in astate where the seal cap is in contact with the reaction container.

Preferably, an arc channel defining the first gas channel between thefront end opening of the first gas supply port and the base opening ofthe second gas channel has a center angle of 90° to 270°.

Preferably, the second gas channel is formed at least partially by apipe, and wherein the pipe includes a first vertical portion and asecond vertical portion, and is separable with the first verticalportion and the second vertical portion.

Preferably, there are provided a support member that supports thesubstrate; a rotation shaft that is provided through the seal cap andsupports and rotates the support member; and a rotation mechanism thatis attached to the seal cap and rotates the rotation shaft, wherein therotation mechanism includes therein a hollow portion that opens to theinside of the reaction container through a space between the rotationshaft and the seal cap, and wherein the second gas channel is formed bythe hollow portion, and a pipe through which the first gas channel is incommunication with the hollow portion

Preferably, the first gas is an NH₃ gas or an inert gas, wherein thesecond gas is a chlorosilane gas.

According to another aspect of the present invention, there is provideda substrate processing apparatus, including: a reaction tube in which asubstrate is processed; a manifold having one end connected to anopening of the reaction tube; a seal cap, brought into contact via afirst sealing member and a second sealing member with another end of themanifold on the opposite side of the one end connected to the reactiontube, so as to seal air-tightly an opening in the another end of themanifold; a first gas channel, defined by a recessed portion providedalong the first sealing member and the second sealing member and in atleast a portion of at least one of the manifold and the seal cap in aregion between the first sealing member and the second sealing member,in a state where the seal cap is in contact with the manifold; a secondgas channel, provided to the seal cap and through which the first gaschannel is in communication with an inside of the reaction tube; a firstgas supply port that is provided to the manifold and supplies a firstgas to the first gas channel; and a second gas supply port that isprovided to the manifold and supplies a second gas into the reactiontube, wherein a portion of the first gas supply port opening to thefirst gas channel, and a portion of the second gas channel opening tothe first gas channel being positioned so as not to overlap each otherin a state where the seal cap is in contact with the manifold.

According to another aspect of the present invention, there is provideda substrate processing apparatus, including: a reaction container inwhich a substrate is processed; a seal cap, brought into contact withone end in a opening side of the reaction container via a first sealingmember and a second sealing member, so as to seal the opening of thereaction container air-tightly; a first gas channel, defined by anannular recessed portion provided in at least one of the reactioncontainer and the seal cap in a region between the first sealing memberand the second sealing member in a state where the seal cap is incontact with the reaction container;

a second gas channel, provided to the seal cap and through which thefirst gas channel is in communication with an inside of the reactioncontainer; a first gas supply port that is provided to the reactioncontainer and supplies a first gas to the first gas channel; and asecond gas supply port that is provided to the reaction container andsupplies a second gas into the reaction container, wherein a portion ofthe first gas supply port opening to the first gas channel, and aportion of the second gas channel opening to the first gas channel beingseparated from each other in a state where the seal cap is in contactwith the reaction container.

According to yet another aspect of the present invention, there isprovided a substrate processing apparatus, comprising: a reactioncontainer in which a substrate is processed; a seal cap, brought intocontact with one end in an opening side of the reaction container via afirst sealing member and a second sealing member, so as to seal theopening of the reaction container air-tightly; a first gas channel,formed in a region between the first sealing member and the secondsealing member in a state where the seal cap is in contact with thereaction container; a second gas channel, provided to the seal cap andthrough which the first gas channel is in communication with an insideof the reaction container; and a gas supply port that is provided to thereaction container and supplies a gas to the first gas channel, whereina portion of the first gas supply port opening to the first gas channel,and a portion of the second gas channel opening to the first gas channelbeing separated from each other is a state where the seal cap is incontact with the reaction container.

According to still another aspect of the present invention, there isprovided a method of manufacturing a semiconductor device, comprisingthe steps of: loading a substrate into a reaction container; forming afirst gas channel in a region between a first sealing member and asecond sealing member, by bringing a seal cap into contact with one endin an opening side of the reaction container via the first sealingmember and the second sealing member so as to seal the opening of thereaction container air-tightly; processing the substrate by supplying afirst gas to the first gas channel through a first gas supply portprovided to the reaction container, and supplying the first gas suppliedto the first gas channel into the reaction container through a secondgas channel that is provided to the seal cap to connect the first gaschannel to the reaction container, and supplying a second gas into thereaction container through a second gas supply port provided to thereaction container; and unloading the processed substrate from thereaction container.

According to yet another aspect of the present invention, there isprovided a method of manufacturing a semiconductor device, comprisingthe steps of: loading a substrate into a reaction container; forming afirst gas channel in a region between a first sealing member and asecond sealing member, by bringing a seal cap into contact with one endin an opening side of the reaction container via the first sealingmember and the second sealing member so as to seal the opening of thereaction container air-tight; processing the substrate by supplying agas to the first gas channel through a first gas supply port provided tothe reaction container, and supplying the gas supplied to the first gaschannel into the reaction container through a second gas channel that isprovided to the seal cap to connect the first gas channel to thereaction container; and unloading the processed substrate from thereaction container.

INDUSTRIAL APPLICABILITY

The present invention is applicable to substrate processing apparatusesthat process substrates such as semiconductor wafers and glasssubstrates, and semiconductor device manufacturing methods, in whichadhesion of by-products needs to be prevented with a simple structure.

1. A substrate processing apparatus, comprising: a reaction container inwhich a substrate is processed; a seal cap, brought into contact withone end in an opening side of the reaction container via a first sealingmember and a second sealing member so as to seal the opening side of thereaction container air-tightly; a first gas channel, formed in a regionbetween the first sealing member and the second sealing member in astate where the seal cap is in contact with the reaction container; asecond gas channel, provided to the seal cap and through which the firstgas channel is in communication with an inside of the reactioncontainer; a first gas supply port that is provided to the reactioncontainer and supplies a first gas to the first gas channel; and asecond gas supply port that is provided to the reaction container andsupplies a second gas into the reaction container, wherein a front endopening of the first gas supply port opening to the first gas channel,and a base opening of the second gas channel opening to the first gaschannel being separated from each other in a state where the seal cap isin contact with the reaction container.
 2. The substrate processingapparatus according to claim 1, further comprising a groove providedalong the first sealing member and the second sealing member, in atleast a portion of at least one of the reaction container and the sealcap in the region between the first sealing member and the secondsealing member, in a state where the seal cap is in contact with thereaction container, wherein the first gas channel is defined by thegroove.
 3. The substrate processing apparatus according to claim 2,wherein the groove is a form of an arc or a ring.
 4. The substrateprocessing apparatus according to claim 2, wherein the groove isprovided along the entire periphery of the region between the firstsealing member and the second sealing member.
 5. The substrateprocessing apparatus according to claim 1, wherein the front end openingof the first gas supply port and the base opening of the second gaschannel are positioned substantially opposite to each other with respectto the center of the seal cap, in a state where the seal cap is incontact with the reaction container.
 6. The substrate processingapparatus according to claim 1, wherein an arc channel defining thefirst gas channel between the front end opening of the first gas supplyport and the base opening of the second gas channel has a center angleof 90° to 270°.
 7. The substrate processing apparatus according to claim1, wherein the second gas channel is formed at least partially by apipe, and wherein the pipe includes a first vertical portion and asecond vertical portion, and is separable with the first verticalportion and the second vertical portion.
 8. The substrate processingapparatus according to claim 1, further comprising: a support memberthat supports the substrate; a rotation shaft that is provided throughthe seal cap and supports and rotates the support member; and a rotationmechanism that is attached to the seal cap and rotates the rotationshaft, wherein the rotation mechanism includes therein a hollow portionthat opens to the inside of the reaction container through a spacebetween the rotation shaft and the seal cap, and wherein the second gaschannel is formed by the hollow portion, and a pipe through which thefirst gas channel is in communication with the hollow portion.
 9. Thesubstrate processing apparatus according to claim 1, wherein the firstgas is an NH₃ gas or an inert gas, and wherein the second gas is achlorosilane gas.
 10. A substrate processing apparatus, comprising: areaction tube in which a substrate is processed; a manifold having oneend connected to an opening of the reaction tube; a seal cap, broughtinto contact via a first sealing member and a second sealing member withanother end of the manifold on an opposite side of the one end connectedto the reaction tube, so as to seal air-tightly an opening in theanother end of the manifold; a first gas channel, defined by a recessedportion provided along the first sealing member and the second sealingmember and in at least a portion of at least one of the manifold and theseal cap in a region between the first sealing member and the secondsealing member, in a state where the seal cap is in contact with themanifold; a second gas channel, provided to the seal cap and throughwhich the first gas channel is in communication with an inside of thereaction tube; a first gas supply port that is provided to the manifoldand supplies a first gas to the first gas channel; and a second gassupply port that is provided to the manifold and supplies a second gasinto the reaction tube, wherein a portion of the first gas supply portopening to the first gas channel, and a portion of the second gaschannel opening to the first gas channel being positioned so as not tooverlap each other in a state where the seal cap is in contact with themanifold.
 11. A substrate processing apparatus, comprising: a reactioncontainer in which a substrate is processed; a seal cap, brought intocontact with one end in a opening side of the reaction container via afirst sealing member and a second sealing member, so as to seal theopening side of the reaction container air-tightly; a first gas channel,defined by an annular recessed portion provided in at least one of thereaction container and the seal cap in a region between the firstsealing member and the second sealing member in a state where the sealcap is in contact with the reaction container; a second gas channel,provided to the seal cap and through which the first gas channel is incommunication with an inside of the reaction container; a first gassupply port that is provided to the reaction container and supplies afirst gas to the first gas channel; and a second gas supply port that isprovided to the reaction container and supplies a second gas into thereaction container, wherein a portion of the first gas supply portopening to the first gas channel, and a portion of the second gaschannel opening to the first gas channel being separated from each otherin a state where the seal cap is in contact with the reaction container.12. A substrate processing apparatus, comprising: a reaction containerin which a substrate is processed; a seal cap, brought into contact withone end in an opening side of the reaction container via a first sealingmember and a second sealing member, so as to seal the opening side ofthe reaction container air-tightly; a first gas channel, formed in aregion between the first sealing member and the second sealing member ina state where the seal cap is in contact with the reaction container; asecond gas channel, provided to the seal cap and through which the firstgas channel is in communication with an inside of the reactioncontainer; and a gas supply port that is provided to the reactioncontainer and supplies a gas to the first gas channel, wherein a portionof the first gas supply port opening to the first gas channel, and aportion of the second gas channel opening to the first gas channel beingseparated from each other is a state where the seal cap is in contactwith the reaction container.